Q-Tech太空級(jí)多輸出CMOS振蕩器突破極端環(huán)境的時(shí)鐘基準(zhǔn)技術(shù)

來(lái)源：金洛鑫瀏覽：- 發(fā)布日期：2025-09-06 09:19:38【大中小】

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Q-Tech太空級(jí)多輸出CMOS振蕩器突破極端環(huán)境的時(shí)鐘基準(zhǔn)技術(shù)
太空環(huán)境對(duì)振蕩器的威脅主要來(lái)自三個(gè)維度:宇宙輻射導(dǎo)致的器件性能衰退,極端溫度循環(huán)引發(fā)的頻率漂移,發(fā)射階段強(qiáng)沖擊造成的結(jié)構(gòu)損傷.傳統(tǒng)地面級(jí)振蕩器在太空中的失效率高達(dá)87%,而Q-Tech通過(guò)"材料-結(jié)構(gòu)-電路"三位一體的設(shè)計(jì)策略,構(gòu)建了太空級(jí)多輸出CMOS時(shí)鐘振蕩器的技術(shù)壁壘.在抗輻射設(shè)計(jì)方面,Q-Tech晶振代理商采用輻射加固(Rad-Hard)工藝與抗單粒子效應(yīng)(SEE)結(jié)構(gòu).以QT2021系列為例,其核心微控制器與數(shù)字補(bǔ)償電路均采用特種工藝制造,總劑量輻射耐受能力達(dá)到50krad(Si),單粒子鎖定(SEL)閾值≥75MeV-cm²/mg,遠(yuǎn)超NASA對(duì)近地軌道衛(wèi)星的40krad(Si)輻射要求.這種設(shè)計(jì)可有效抵御范艾倫輻射帶中的高能質(zhì)子與電子沖擊,避免時(shí)鐘信號(hào)因輻射導(dǎo)致的瞬時(shí)中斷或永久失效.對(duì)于更遙遠(yuǎn)的深空探測(cè)任務(wù)(如火星探測(cè)),Q-Tech還可提供定制化的QT625S/725S系列SAW振蕩器,其輻射耐受能力提升至300krad(Si),滿足地球同步軌道(GEO)及以外的極端輻射環(huán)境需求.

極端溫度適應(yīng)能力是太空振蕩器的另一核心指標(biāo).Q-Tech通過(guò)雙模式溫度傳感補(bǔ)償技術(shù)與高溫穩(wěn)定材料實(shí)現(xiàn)突破:QTCH系列采用AT/IT切割進(jìn)口石英晶體,配合內(nèi)置的自溫度傳感resonator,可在-55℃至+200℃的超寬溫度范圍內(nèi)保持頻率穩(wěn)定,頻率溫度系數(shù)控制在±40ppm至±250ppm,而傳統(tǒng)太空級(jí)振蕩器在+150℃以上即出現(xiàn)明顯性能衰減.在結(jié)構(gòu)設(shè)計(jì)上,該系列采用密封陶瓷封裝與鍍金觸點(diǎn),不僅能隔絕太空真空環(huán)境對(duì)內(nèi)部電路的侵蝕,還能通過(guò)金屬外殼實(shí)現(xiàn)均勻熱傳導(dǎo),避免局部溫度過(guò)高導(dǎo)致的CMOS輸出邏輯錯(cuò)誤.針對(duì)太空電子系統(tǒng)多模塊同步需求,Q-Tech創(chuàng)新開(kāi)發(fā)了多通道CMOS輸出晶振架構(gòu).不同于傳統(tǒng)振蕩器單路輸出的局限性,QT2021系列與QTCH系列均支持2-4路獨(dú)立CMOS邏輯輸出(1.8V/2.5V/3.3V可選),每路輸出均可提供10MHz-80MHz的可編程頻率信號(hào),相位噪聲低至-135dBc/Hz(10kHz頻偏).這種架構(gòu)可同時(shí)為衛(wèi)星的通信模塊,導(dǎo)航系統(tǒng),數(shù)據(jù)處理單元提供同步時(shí)鐘,減少設(shè)備間的信號(hào)延遲,提升整體系統(tǒng)響應(yīng)速度.某航天研究所測(cè)試數(shù)據(jù)顯示,采用Q-Tech多輸出振蕩器的衛(wèi)星數(shù)據(jù)處理系統(tǒng),,同步精度提升3個(gè)數(shù)量級(jí).數(shù)字補(bǔ)償算法:通過(guò)內(nèi)置的輻射加固微控制器,實(shí)時(shí)采集晶體溫度數(shù)據(jù)并進(jìn)行動(dòng)態(tài)補(bǔ)償,在-40℃至+85℃范圍內(nèi)頻率穩(wěn)定度可達(dá)±20ppb,遠(yuǎn)超傳統(tǒng)TCXO晶振(溫補(bǔ)晶體振蕩器)±100ppb的水平;低功耗設(shè)計(jì):工作電流僅90mA(3.3V供電),待機(jī)電流低至5μA,較同精度OCXO減少90%以上功耗,特別適用于依靠太陽(yáng)能供電的衛(wèi)星系統(tǒng);

多輸出靈活性:提供2路CMOS輸出與1路sinewave輸出,頻率覆蓋10MHz-80MHz,可滿足不同模塊的接口需求,輸出信號(hào)上升時(shí)間≤10ns,確保高速數(shù)據(jù)傳輸?shù)臅r(shí)序完整性.寬頻率范圍:支持1MHz-48MHz基本模式振蕩,每路CMOS輸出可獨(dú)立編程,滿足從低速傳感器到高速通信模塊的多樣化需求;高抗惡劣環(huán)境能力:采用鈦合金外殼與硅膠緩沖層,抗沖擊能力達(dá)2000g,抗振動(dòng)性能(10-2000Hz)頻率偏差僅±2ppb,在月球車(chē)等表面探測(cè)設(shè)備中表現(xiàn)優(yōu)異;超高輻射耐受:總劑量輻射耐受達(dá)300krad(Si),適用于木星,土星等強(qiáng)輻射環(huán)境的探測(cè)任務(wù);6G低相噪晶振:10kHz頻偏下相位噪聲≤-135dBc/Hz,噪聲基底低至-168dBc/Hz,確保高頻通信信號(hào)的清晰度,減少信號(hào)干擾;電壓控制功能:QT725S系列支持±5V電壓控制,頻率牽引范圍達(dá)±100ppm,可實(shí)時(shí)補(bǔ)償多普勒效應(yīng)導(dǎo)致的頻率偏移,提升深空通信的可靠性.

Q-Tech太空級(jí)多輸出CMOS振蕩器突破極端環(huán)境的時(shí)鐘基準(zhǔn)技術(shù)

SG3225CAN 25.0000M-TJGA6	EPSON	SG3225CAN	XO	25 MHz	CMOS	1.8V ~ 3.3V	±50ppm
SG7050CAN 25.000000M-TJGA0	EPSON	SG7050CAN	XO	25 MHz	CMOS	3.3V	±50ppm
SG7050CAN 12.000000M-TJGA0	EPSON	SG7050CAN	XO	12 MHz	CMOS	1.8V ~ 3.3V	±50ppm
SG7050CCN 20.000000M-HJGA0	EPSON	SG7050CCN	XO	20 MHz	CMOS	5V	±50ppm
TG2520SMN 26.0000M-ECGNNM5	EPSON	TG2520SMN	TCXO	26 MHz	Clipped Sine Wave	1.8V	±500ppb
SG-615P 22.1184MC0:ROHS	EPSON	SG-615	XO	22.1184 MHz	CMOS, TTL	5V	±100ppm
SG-310SCF 48.0000MC3	EPSON	SG-310	XO	48 MHz	CMOS	3.3V	±100ppm
SG-310SDF 25.0000MB3	EPSON	SG-310	XO	25 MHz	CMOS	2.5V	±50ppm
SG-210STF 20.0000ML	EPSON	SG-210STF	XO	20 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG-615P 7.3728MC0:ROHS	EPSON	SG-615	XO	7.3728 MHz	CMOS, TTL	5V	±100ppm
VG-4231CE 27.0000M-PSCM0	EPSON	VG-4231CE	VCXO	27 MHz	CMOS	3.3V	±37ppm
SG7050CAN 24.576000M-TJGA3	EPSON	SG7050CAN	XO	24.576 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 12.000000M-TJGA3	EPSON	SG7050CAN	XO	12 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 48.000000M-TJGA3	EPSON	SG7050CAN	XO	48 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 25.000000M-TJGA3	EPSON	SG7050CAN	XO	25 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 48.000000M-TJGAB	EPSON	SG7050CAN	XO	48 MHz	CMOS	3.3V	±50ppm
SG7050CAN 8.000000M-TJGA3	EPSON	SG7050CAN	XO	8 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 10.000000M-TJGA3	EPSON	SG7050CAN	XO	10 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 27.000000M-TJGA3	EPSON	SG7050CAN	XO	27 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CAN 24.000000M-TJGA3	EPSON	SG7050CAN	XO	24 MHz	CMOS	1.6V ~ 3.6V	±50ppm
TG2016SMN 26.0000M-ECGNNM0	EPSON	TG2016SMN	TCXO	26 MHz	Clipped Sine Wave	1.8V	±500ppb
SG3225EAN 100.000000M-KEGA0	EPSON	SG3225EAN	XO	100 MHz	LVPECL	2.5V ~ 3.3V	±30ppm
SG5032VAN 156.250000M-KJGA0	EPSON	SG5032VAN	XO	156.25 MHz	LVDS	2.5V ~ 3.3V	±50ppm
SG3225VAN 100.000000M-KEGA0	EPSON	SG3225VAN	XO	100 MHz	LVDS	2.5V ~ 3.3V	±30ppm
SG3225VAN 156.250000M-KEGA0	EPSON	SG3225VAN	XO	156.25 MHz	LVDS	2.5V ~ 3.3V	±30ppm
TG2520SMN 27.0000M-MCGNNM3	EPSON	TG2520SMN	TCXO	27 MHz	Clipped Sine Wave	2.8V ~ 3.3V	±500ppb
SG-615P 12.0000MC3: ROHS	EPSON	SG-615	XO	12 MHz	CMOS, TTL	5V	±100ppm
SG-615P 8.0000MC3: ROHS	EPSON	SG-615	XO	8 MHz	CMOS, TTL	5V	±100ppm
SG-615P 16.0000MC3: ROHS	EPSON	SG-615	XO	16 MHz	CMOS, TTL	5V	±100ppm
SG3225EAN 250.000000M-KEGA3	EPSON	SG3225EAN	XO	250 MHz	LVPECL	2.5V ~ 3.3V	±30ppm
SG7050EAN 125.000000M-KEGA3	EPSON	SG7050	XO	125 MHz	LVPECL	2.5V ~ 3.3V	±30ppm
SG7050EAN 250.000000M-KEGA3	EPSON	SG7050	XO	250 MHz	LVPECL	2.5V ~ 3.3V	±30ppm
SG7050EAN 200.000000M-KEGA3	EPSON	SG7050	XO	200 MHz	LVPECL	2.5V ~ 3.3V	±30ppm
SG-8002CA 25.0000M-PCCL3	EPSON	SG-8002	XO	25 MHz	CMOS	3.3V	±100ppm
SG-8002CA 4.0000M-PCCL3	EPSON	SG-8002	XO	4 MHz	CMOS	3.3V	±100ppm
VG-4231CA 25.0000M-FGRC3	EPSON	VG-4231CA	VCXO	25 MHz	CMOS	3.3V	±50ppm
TG-3541CE 32.7680KXB3	EPSON	TG-3541CE	TCXO	32.768 kHz	CMOS	1.5V ~ 5.5V	-
TG2016SMN 27.0000M-MCGNNM3	EPSON	TG2016SMN	TCXO	27 MHz	Clipped Sine Wave	2.8V ~ 3.3V	±500ppb
TG2016SMN 38.4000M-MCGNNM3	EPSON	TG2016SMN	TCXO	38.4 MHz	Clipped Sine Wave	2.8V ~ 3.3V	±500ppb
SG5032CBN 80.000000M-TJGA3	EPSON	SG5032CBN	XO	80 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG3225VAN 100.000000M-KEGA3	EPSON	SG3225VAN	XO	100 MHz	LVDS	2.5V ~ 3.3V	±30ppm
XG-1000CA 156.2500M-DBL3	EPSON	XG-1000CA	SO SAW	156.25 MHz	CMOS	2.5V	±50ppm
SG3225VAN 80.000000M-KEGA3	EPSON	SG3225VAN	XO	80 MHz	LVDS	2.5V ~ 3.3V	±30ppm
XG-1000CB 125.0000M-DBL3	EPSON	XG-1000CB	SO SAW	125 MHz	CMOS	2.5V	±50ppm
SG3225VEN 156.250000M-DJGA0	EPSON	SG3225VEN	XO	156.25 MHz	LVDS	2.5V	±50ppm
SG3225EEN 156.250000M-CJGA0	EPSON	SG3225EEN	XO	156.25 MHz	LVPECL	3.3V	±50ppm
XG-2102CA 100.0000M-LGPAL3	EPSON	XG-2102CA	SO SAW	100 MHz	LVDS	3.3V	±50ppm
SG3225HBN 156.250000M-CJGA3	EPSON	SG3225HBN	XO	156.25 MHz	HCSL	3.3V	±50ppm
EG-2121CA 125.0000M-PHPAL3	EPSON	EG-2121CA	SO SAW	125 MHz	LVPECL	2.5V	±100ppm
SG3225VEN 125.000000M-DJHA3	EPSON	SG3225VEN	XO	125 MHz	LVDS	2.5V	±50ppm
SG3225EEN 200.000000M-CLGA3	EPSON	SG3225EEN	XO	200 MHz	LVPECL	3.3V	±100ppm
EG-2121CA 156.2500M-PGPAL3	EPSON	EG-2121CA	SO SAW	156.25 MHz	LVPECL	2.5V	±50ppm
SG-210STF 48.0000ML	EPSON	SG-210STF	XO	48 MHz	CMOS	1.6V ~ 3.6V	±50ppm
SG7050CCN 10.000000M-HJGA3	EPSON	SG7050	XO	10 MHz	CMOS	4.5V ~ 5.5V	±50ppm
EG-2121CA 125.0000M-LHPAB	EPSON	EG-2121CA	SO SAW	125 MHz	LVDS	2.5V	±100ppm
EG-2121CA 200.0000M-LGPNB	EPSON	EG-2121CA	SO SAW	200 MHz	LVDS	2.5V	±50ppm
EG-2121CA 100.0000M-LGPAB	EPSON	EG-2121CA	SO SAW	100 MHz	LVDS	2.5V	±50ppm
EG-2121CA 200.0000M-LGPAB	EPSON	EG-2121CA	SO SAW	200 MHz	LVDS	2.5V	±50ppm
SG5032CCN 3.276800M-HJGA3	EPSON	SG5032	XO	3.2768 MHz	CMOS	4.5V ~ 5.5V	±50ppm
SG5032CAN 4.000000M-TJGA3	EPSON	SG5032	XO	4 MHz	CMOS	1.6V ~ 3.6V	±50ppm